IRFP9240N 200V 340mΩ@10V,6.6A 2V P-channel TO-247 MOSFET Transistor

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IRFP9240N 200V 340mΩ@10V,6.6A 2V P-channel TO-247 MOSFET Transistor The IRFP9240 is a silicon P-channel enhanced mode power MOSFET, manufactured using advanced MOSFET technology. This technology is focused on optimizing key performance parameters, specifically engineered to significantly reduce conduction losses during operation. The fundamental structure is a vertical DMOS design, which allows it to handle high voltage and current efficiently. As a P-channel device, its voltage polarities and current flow are the inverse of the more common N-channel MOSFETs, making it suitable for specific circuit configurations like high-side switching. A primary benefit of this transistor’s advanced design is its improved switching performance, making it effective in high-frequency applications. The device is characterized by a low on-resistance, which directly contributes to higher efficiency by minimizing power loss when the transistor is in its fully on state. Furthermore, it has been ruggedized, featuring an enhanced dv/dt capability and being 100% tested for avalanche energy, meaning it can withstand stressful transient voltage spikes without failing, thus improving system reliability. Housed in the robust TO-247 package, the IRFP9240 is built for high power dissipation. This package facilitates easy and secure mounting to an external heat sink, which is crucial for managing the thermal load generated during operation in power-intensive applications. The combination of its electrical characteristics and physical packaging makes it a component designed for durability and performance in demanding environments like switch-mode power supplies. Features: Fast Switching. Low Ciss (Input Capacitance). 100% Avalanche Tested. Improved dv/dt Capability. RoHS Compliant. Specifications: Specification Value Polarity: P-Channel Drain-Source Voltage (VDSS): -200 V Continuous Drain Current (ID): -11 A On-Resistance (RDS(on)): 0.34 Ω (typ) @ VGS=-10V, ID=-6.6A Gate Threshold Voltage (VGS(th)): -2 V to -4 V Max. Gate-Source Voltage (VGS): ±20 V Total Gate Charge (Qg): 52 nC (typ) Max. Power Dissipation (PD): 78 W Operating Junction Temperature (TJ): -55 to +150 °C Package: TO-247 Pinout Diagram: Footprint Diagram: Applications: High-Frequency Switching Mode Power Supply (SMPS). High-Speed Switching Applications. General Purpose Power Control. Package Contents: 1x IRFP9240N 200V 340mΩ@10V,6.6A 2V P-channel TO-247 MOSFET Transistor Datasheet