IRFP044 Power MOSFET Transistor N-Channel 60V 57A TO-247AC

IRFP044 Power MOSFET Transistor N-Channel 60V 57A TO-247AC

Part number IRFP044

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IRFP044 Power MOSFET Transistor N-Channel 60V 57A TO-247AC
Makers Electronics
checked 15 days ago
EGP 45
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IRFP044 N Channel MOSFET Transistor 60V 57A 0.028Ω TO-247AC
Makers Electronics
checked 26 days ago
EGP 55
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From Makers Electronics's description

IRFP044 Power MOSFET Transistor N-Channel 60V 57A TO-247AC IRFP044 Power MOSFET Transistor N-Channel 60V 57A TO-247AC is a third-generation HEXFET® power MOSFET designed for high-speed switching and low conduction losses. It features a maximum drain-source voltage of 60V, continuous drain current up to 57A, and an ultra-low 28mΩ on-state resistance. Packaged in the TO-247AC through-hole package, it is ideal for power supplies, motor drives, DC-DC converters, inverters, battery-powered systems, and industrial power control applications. The device also offers fast switching performance, ease of paralleling, and an isolated mounting hole for simplified thermal management. Features Low 28mΩ drain-source on-state resistance. High continuous drain current of 57A. Maximum drain-source voltage of 60V. Fast switching performance for high-efficiency circuits. Dynamic dv/dt ruggedness for improved reliability. Isolated central mounting hole for easy heatsink installation. Operating junction temperature up to 175°C. Easy paralleling capability. Simple gate drive requirements. TO-247AC package provides excellent thermal performance. Specifications Parameter Details Product Type N Channel Power MOSFET Series HEXFET Part Number IRFP044 Channel Type N-Channel Package TO-247AC Mounting Type Through Hole Drain-Source Voltage (VDS) 60V Gate-Source Voltage (VGS) ±20V Continuous Drain Current (ID @ TC=25°C) 57A Continuous Drain Current (ID @ TC=100°C) 40A Pulsed Drain Current (IDM) 230A Power Dissipation (PD) 180W Drain-Source On Resistance (RDS(on)) 0.028Ω Single Pulse Avalanche Energy 53mJ Peak Diode Recovery dv/dt 4.5V/ns Operating Junction Temperature -55°C to +175°C Storage Temperature -55°C to +175°C Junction-to-Case Thermal Resistance 0.83°C/W Case-to-Sink Thermal Resistance 0.24°C/W Junction-to-Ambient Thermal Resistance 40°C/W Dimensions Pinout Pin No. Pin Name Description 1 Gate (G) Controls switching of the MOSFET 2 Drain (D) Main current path 3 Source (S) Current return path Footprint Applications Switching power supplies. DC-DC converters. Motor drive circuits. Battery-powered systems. DC motor controllers. Inverters. UPS systems. High-current switching circuits. Industrial automation equipment. Power management systems. Solar power converters. Electronic load circuits. Packages 1 x IRFP044 Power MOSFET Transistor N-Channel 60V 57A TO-247AC Datasheet IRFP044

From Makers Electronics's description

IRFP044 N Channel MOSFET Transistor 60V 57A 0.028Ω TO-247AC IRFP044 MOSFET Transistor N Channel 60V 57A 0.028Ω TO-247AC is a third-generation N-channel HEXFET power MOSFET engineered by International Rectifier. It represents a significant evolution in power transistor technology, designed to offer an optimal blend of performance and robustness. Its core utilizes a vertical DMOS structure, which is central to the HEXFET design, enabling the device to handle very high current levels with exceptional efficiency. This construction is focused on minimizing conduction losses while maintaining ruggedness for demanding industrial environments. A defining characteristic of this MOSFET is its extremely low static drain-to-source on-resistance. This ultra-low resistance is crucial as it directly translates to reduced power dissipation when the device is in its fully on state, leading to higher overall system efficiency and less heat generation. The transistor is also characterized by its fast switching capabilities, which allow it to operate effectively in high-frequency circuits. Furthermore, it is designed with a dynamic dv/dt rating and is capable of withstanding specified levels of avalanche energy, enhancing its reliability in the presence of voltage transients. Housed in the TO-247 package, the IRFP044 is built for applications that exceed the power handling capabilities of smaller packages like the TO-220. A key mechanical advantage of this package is its isolated central mounting hole, which simplifies the installation of a heat sink without the need for insulating hardware. The package also provides greater creepage distances between its pins, which helps in meeting various safety specification requirements in commercial and industrial equipment. Features Dynamic dv/dt Rating. Isolated Central Mounting Hole. 175°C Operating Temperature. Fast Switching. Ease of Paralleling. Simple Drive Requirements. Third Generation HEXFET Technology. Specifications Parameter Details Drain-Source Voltage (VDSS): 60 V Continuous Drain Current (ID) @ Tc=25°C: 57 A Max. On-Resistance (RDS(on)) @ VGS=10V: 0.028 Ω Gate Threshold Voltage (VGS(th)): 2.0 – 4.0 V Max. Power Dissipation (PD) @ Tc=25°C: 180 W Gate-Source Voltage (VGS): ±20 V Total Gate Charge (Qg): 95 nC (max) Operating Junction Temperature (TJ): -55 to +175 °C Package: TO-247 Pinout Diagram Footprint Diagram Applications High-Current DC Motor Controls. Switch-Mode Power Supplies (SMPS). Power Inverters and Converters. High-Power Amplifiers. Industrial Switching Equipment. Package Contents 1 x IRFP044 N Channel MOSFET Transistor 60V 57A 0.028Ω TO-247AC Datasheet IRFP044

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