IRFB4110 MOSFET Transistor N-Channel 100V 180A TO-220

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IRFB4110 MOSFET Transistor N-Channel 100V 180A TO-220 IRFB4110 MOSFET Transistor N-Channel 100V 180A TO-220 is a high-performance power MOSFET designed for demanding switching and power management applications. Featuring a drain-source voltage rating of 100V and continuous drain current capability up to 180A, this N-channel MOSFET delivers excellent efficiency with very low RDS(on). The TO-220 package provides effective thermal performance and easy mounting, making it suitable for motor controllers, DC-DC converters, battery-powered systems, inverters, and high-current switching circuits. Features High continuous drain current rating of 180A. Drain-source voltage rating of 100V. Very low RDS(on) for reduced conduction losses. Fast switching performance. Avalanche rated for rugged operation. High efficiency in power conversion applications. Suitable for high-current motor control circuits. TO-220 package for easy mounting and heat sinking. Low gate charge for improved switching efficiency. Reliable operation in demanding environments. Specifications Model Number: IRFB4110 Product Type: MOSFETs Transistor Channel Mode: Enhancement Configuration: Single Transistor Type: 1 N-Channel Number of Channels: 1 Channel Mounting Style: Through Hole Package/Case: TO – 220 Vds-Drain-Source Breakdown Voltage: 100 V Id-Continuous Drain Current: 180 A Rds On-Drain-Source Resistance: 4.5 mΩ Vgs-Gate-Source Voltage: – 20 V, + 20 V Operating Temperature: – 55 °C to + 175 °C Pd-Power Dissipation: 370 W Fall Time: 88 ns Rise Time: 67 ns Turn-Off Delay Time: 78 ns Turn-On Delay Time: 25 ns Pin Configuration Footprint Diagram Applications DC-DC converters. Switched-mode power supplies (SMPS). Motor control circuits. Uninterruptible power supplies (UPS). Renewable energy systems (e.g., solar inverters). High-power battery management. Hard switched and High frequency circuits. Package Contents 1x IRFB4110 N-Channel MOSFET Transistor 100V 180A TO-220 Datasheet IRFB4110