IRFP054 N-Channel MOSFET 60V 70A TO-247AC

IRFP054 N-Channel MOSFET 60V 70A TO-247AC

Part number IRFP054

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IRFP054 N-Channel MOSFET 60V 70A TO-247AC
Makers Electronics
checked 26 days ago
EGP 65
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IRFP054 N-Channel Power MOSFET Transistor 60V 70A TO-247AC
Makers ElectronicsOut of stock
checked 18 days ago
EGP 45
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From Makers Electronics's description

IRFP054 N-Channel Power MOSFET Transistor 60V 70A TO-247AC The IRFP054 N-Channel Power MOSFET is designed to handle high current loads while maintaining efficient switching performance. It operates by using a voltage-controlled gate to regulate current flow between the drain and source, making it ideal for high-power and fast-switching applications in modern electronic systems. Encased in a TO-247AC package, the IRFP054 provides excellent thermal dissipation and mechanical strength, allowing reliable operation in demanding environments when paired with proper heat sinking. This device is commonly found in SMPS designs, DC motor controllers, battery-powered systems, and industrial power electronics. Features: N-Channel enhancement-mode MOSFET. Designed for high-current power switching. Low conduction loss for high efficiency. Fast switching response. Rugged and reliable construction. Suitable for linear and switching applications. Through-hole mounting for strong mechanical support. Specifications: Parameter Min Typ Max Units Test Conditions Drain-to-Source Breakdown Voltage (V DSS) 60 – – V V GS = 0V, I D = 250µA Breakdown Voltage Temperature Coefficient (ΔV DSS/ΔT J) – 0.056 – V/°C Reference to 25°C, I D = 1mA Static Drain-to-Source On-Resistance (R DS(on)) – – 0.014 Ω V GS = 10V, I D = 54A Gate Threshold Voltage (V GS(th)) 2.0 – 4.0 V V DS = V GS, I D = 250µA Forward Transconductance (g fs) 25 – – S V DS = 25V, I D = 54A Drain-to-Source Leakage Current (I DSS) – – 25 µA V DS = 60V, V GS = 0V – – 250 µA V DS = 48V, V GS = 0V, T J = 150°C Gate-to-Source Forward Leakage (I GSS) – – 100 nA V GS = 20V Gate-to-Source Reverse Leakage (I GSS) – – -100 nA V GS = -20V Total Gate Charge (Q g) – – 160 nC I D = 64A Gate-to-Source Charge (Q gs) – – 48 nC V DS = 48V Gate-to-Drain (“Miller”) Charge (Q gd) – – 54 nC V GS = 10V Turn-On Delay Time (t d(on)) – 20 – ns V DD = 30V Rise Time (t r) – 160 – ns I D = 64A Turn-Off Delay Time (t d(off)) – 83 – ns R G = 6.2Ω Fall Time (t f) – 150 – ns R D = 0.45Ω Internal Drain Inductance (L D) – 5.0 – nH Between lead, 6 mm from package and center of die contact Internal Source Inductance (L S) – 13 – nH V GS = 0V Input Capacitance (C iss) – 4500 – pF V DS = 25V Output Capacitance (C oss) – 2000 – pF f = 1.0MHz Reverse Transfer Capacitance (C rss) – 300 – pF f = 1.0MHz Pinout: Pin No. Pin Name Description 1 Gate (G) Controls MOSFET switching 2 Drain (D) Main current conduction path 3 Source (S) Current return path Footprint: Applications: Switch-mode power supplies (SMPS). DC motor drivers and controllers. Power inverters and UPS systems. Battery management systems. High-current DC-DC converters. Industrial power control circuits. Packages: 1x IRFP054 N-Channel Power MOSFET Transistor 60V 70A TO-247AC. Documents: IRFP054 Datasheet.

From Makers Electronics's description

IRFP054 N-Channel MOSFET 60V 70A TO-247AC The IRFP054 is a robust N-channel power MOSFET designed for high-current and high-efficiency switching applications. It features low on-resistance and fast switching characteristics, making it ideal for reducing conduction losses and improving overall system performance in power circuits. This MOSFET is widely used in applications such as motor drivers, power supplies, and inverters. Its TO-247AC package allows for effective heat dissipation, enabling reliable operation under high load conditions. The device is suitable for both low-frequency and high-frequency switching designs, offering flexibility for various industrial and consumer electronics applications. Features: N-channel enhancement mode MOSFET. Low on-resistance. Fast switching capability. High current handling capability. High efficiency operation. Good thermal performance. Suitable for high-power applications. Rugged and reliable design. Specifications: Parameter Symbol Min. Typ. Max. Unit Test Condition Drain‑Source Breakdown Voltage V(BR)DSS 60 – – V VGS=0V, ID=250µA Gate Threshold Voltage VGS(th) 2.0 – 4.0 V VDS=VGS, ID=250µA Static Drain‑Source On‑Resistance RDS(on) – – 0.014 Ω VGS=10V, ID=54A Forward Transconductance gfs 25 – – S VDS=25V, ID=54A Drain‑Source Leakage Current IDSS – – 25 µA VDS=60V, VGS=0V Drain‑Source Leakage (150°C) IDSS – – 250 µA VDS=48V, VGS=0V, TJ=150°C Gate‑Source Leakage (Forward) IGSS – – 100 nA VGS=20V Gate‑Source Leakage (Reverse) IGSS – – -100 nA VGS=-20V Total Gate Charge Qg – – 160 nC ID=64A, VDS=48V, VGS=10V Gate‑Source Charge Qgs – – 48 nC Same as above Gate‑Drain Charge (Miller) Qgd – – 54 nC Same as above Turn‑On Delay Time td(on) – 20 – ns VDD=30V, ID=64A, RG=6.2Ω Rise Time tr – 160 – ns Same as above Turn‑Off Delay Time td(off) – 83 – ns Same as above Fall Time tf – 150 – ns Same as above Input Capacitance Ciss – 4500 – pF VDS=25V, f=1MHz Output Capacitance Coss – 2000 – pF Same as above Reverse Transfer Capacitance Crss – 300 – pF Same as above Diode Forward Voltage VSD – – 2.5 V IS=90A, VGS=0V, TJ=25°C Reverse Recovery Time trr – 270 540 ns IF=64A, di/dt=100A/µs Reverse Recovery Charge Qrr – 1.1 2.2 µC Same as above Internal Drain Inductance LD – 5.0 – nH Between lead and die Internal Source Inductance LS – 13 – nH Same as above Junction‑to‑Case Thermal Resistance RθJC – – 1.5 °C/W Steady state Pinout: Footprint: Applications: Switch mode power supplies (SMPS). Motor control circuits. DC-DC converters. Power inverters. Battery management systems. High-current switching applications. Industrial power control systems. Package Included: 1x IRFP054 N-Channel MOSFET 60V 70A TO-247AC. Documents: IRFP054 Datasheet .

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