FGA40N120 IGBT Power Transistor (1200V-64A) TO-3P

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Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package/Case: TO-3P Mounting Style: Through Hole Configuration: Single Collector-Emitter Voltage VCEO Max: 1.2 kV Maximum Gate Emitter Voltage: – 25 V, 25 V Minimum Operating Temperature: – 55 C Maximum Operating Temperature: + 150 C Packaging: Tube Continuous Collector Current Ic Max: 64 A Product Type: IGBT Transistors Subcategory: IGBTs Documents: FGH40N120 Datasheet TO-3P Step 3D Model