IRFZ24N N-Channel Power MOSFET Transistor 55V 17A TO-220

IRFZ24N N-Channel Power MOSFET Transistor 55V 17A TO-220 The IRFZ24N is a Fifth Generation HEXFET® power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This component combines fast switching speed with a ruggedized device design, providing designers with an incredibly efficient device for use in a wide variety of commercial and industrial applications. Features Advanced Process Technology Dynamic dv/dt Rating High Operating Temperature Fast Switching Fully Avalanche Rated Specifications Parameter Symbol Value Units Drain-to-Source Breakdown Voltage V DSS 55 V Continuous Drain Current (@ T C = 25°C) I D 17 A Continuous Drain Current (@ T C = 100°C) I D 12 A Pulsed Drain Current I DM 68 A Max Power Dissipation (@ T C = 25°C) P D 45 W Linear Derating Factor – 0.30 W/°C Gate-to-Source Voltage V GS ±20 V Static Drain-to-Source On-Resistance R DS(on) 0.07 Ω Single Pulse Avalanche Energy E AS 71 mJ Operating Junction Temperature Range T J -55 to +175 °C Thermal Resistance (Junction-to-Case) R θJC 3.3 (Max) °C/W Pin Configuration Applications DC-DC Converters Motor Control Circuits Solenoid and Relay Drivers General Purpose Power Switching Package Include: 1x IRFZ24N N-Channel Power MOSFET Transistor 55V 17A TO-220 Datasheet IRFZ24N

IRFZ24N N-Channel MOSFET, 17A, 55V, 3-Pin, TO-220 Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry Package Includes: 1x IRFZ24N Documents : IRFZ24N Datasheet Related Products: Transistors