IRF640 N-Channel Power MOSFET Transistor (200V – 0.15Ω – 18A) TO-220

IRF640 N-Channel Power MOSFET Transistor (200V – 0.15Ω – 18A) TO-220 IRF640 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 150 W. Features:- Dynamic dV/dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 200V Continuous Drain Current (Id) 18A Drain-Source Resistance (Rds On) 0.15Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 67 nC Operating Temperature Range -55 ∼ +175°C Power Dissipation (Pd) 150W Related Documents:- IRF640 MOSFET Datasheet

IRF640 N-Channel Power MOSFET 200V ,18A ,125W Specifications: Attribute Value Channel Type N Maximum Continuous Drain Current 18 A Maximum Drain Source Voltage 200 V Package Type TO-220AB Mounting Type Through Hole Pin Count 3 Maximum Drain Source Resistance 150 m? Channel Mode Enhancement Maximum Gate Threshold Voltage 4V Minimum Gate Threshold Voltage 2V Maximum Power Dissipation 150 W Transistor Configuration Single Maximum Gate Source Voltage -20 V, +20 V Maximum Operating Temperature +175 ?C Number of Elements per Chip 1 Typical Gate Charge @ Vgs 67 nC @ 10 V Transistor Material Si Series HEXFET Height 8.77mm Minimum Operating Temperature -55 ?C Package Includes: 1x IRF640 MOSFET Datasheet: IRF640 Datasheet Related Products: Transistors