IRF5305 P-Channel Power MOSFET 55V 31A TO-220

IRF5305 P-Channel Power MOSFET 55V 31A TO-220 The IRF5305 is a robust P‑channel HEXFET® MOSFET in a TO‑220AB package, designed for high‑power applications requiring efficient high‑side switching. It delivers a continuous drain current of –31 A (–22 A at 100 °C) and withstands up to 55 V drain‑to‑source voltage. With a low on‑resistance of 0.06 Ω at V GS =–10 V and an impressive 110 W power dissipation rating, the IRF5305 ensures minimal conduction losses and reliable operation up to a 175 °C junction temperature. Features Fifth‑generation HEXFET® technology for extremely low R DS(on) . P‑channel configuration ideal for high‑side power switching. 55 V drain‑to‑source breakdown voltage. Continuous drain current: –31 A @25 °C (–22 A @100 °C). Low R DS(on) : 0.06 Ω @ V GS =–10 V, I D =–16 A. High pulse‑current capability: –110 A pulsed. Wide gate‑to‑source rating: ±20 V. Single‑pulse avalanche energy: 280 mJ. Fast switching with typical turn‑on delay of 14 ns and turn‑off delay of 39 ns. Specifications Maximum Ratings at T C = 25 °C Parameter Symbol Value Unit Drain–Source Voltage V DSS 55 V Continuous Drain Current I D –31 A Pulsed Drain Current I DM –110 A Gate–Source Voltage V GS ±20 V Power Dissipation P D 110 W Operating Junction Temperature T J –55 to +175 °C Storage Temperature T stg –55 to +175 °C Applications High‑side load switching in automotive and industrial systems. DC‑DC converters and reverse‑battery protection. Power management in telecommunications and server supplies. Motor control, battery protection, and hot‑swap circuits. Package Contents 1× IRF5305 P‑Channel Power MOSFET in TO‑220AB package. Datasheet

IRF5305 P-Channel Power MOSFET Transistor IC (TO-220) 55V 31A 0.6Ω IRF5305 fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Features:- • Advanced process technology • Dynamic dv/dt rating • Fast switching • Fully avalanche rated Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity P-Channel Drain-Source Breakdown Voltage (Vds) -55V Continuous Drain Current (Id) -31A Drain-Source Resistance (Rds On) 60mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 63 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 110W Related Documents IRF5305 MOSFET Datasheet * Product Images are shown for illustrative purposes only and may differ from actual product.

Power MOSFET, TO-220, 55 V, 31 A