P2114AL-3 4Kbit SRAM 150ns IC DIP-18

From the shop's description

P2114AL-3 4Kbit SRAM 150ns IC DIP-18 The P2114AL‑3 is a high-performance, 4 Kbit static random-access memory device organized as 1,024 × 4 bits. Built on asynchronous MOS technology, it offers a maximum access time of 150 ns, supports three-state outputs, and operates from a standard 5 V ±10 % power supply. Packaged in a DIP‑18 form factor, it is designed for embedded and legacy systems requiring fast, reliable SRAM with low latency and minimal control overhead. Features HMOS technology. Low power, high speed. Identical cycle and access time. Single +5V supply ±10% High density 18-pin package. Completely static memory with no clock or timing strobe required. Directly TTL compatible with all I/Os. Common data input and output using three-state outputs. M2114 upgrade. Military temperature range -55 °C ti +125 °C. Not recommended for new designs. Specifications Parameter Value Memory Capacity 4 Kbit Access Time (max) 150 ns Current (max) 50 mA Power Supply Voltage 5.0 V ±10 % I/O Characteristics TTL-compatible, three-state outputs Organization Asynchronous SRAM Package DIP‑18, through‑hole Logic Interface Parallel data, separate address lines Absolute Maximum Ratings Parameter Value Temperature Under Bias –65 °C to +135 °C Storage Temperature –65 °C to +150 °C Voltage on Any Pin With Respect to Ground –3.5 V to +7 V Power Dissipation 1.0 W D.C. Output Current 5 mA PINOUT Applications High-speed SRAM buffer or cache memory in legacy microcomputers and custom logic boards. Real-time data capture and buffering in industrial control and instrumentation. Memory component in vintage game consoles or restoration kits. Design projects requiring fast parallel-access low-capacity static RAM. Documents P2114AL-3 SRAM Datasheet. NOTE: M2114AL-3 is interchangeable with P2114AL-3.