IRFP150N MOSFET (100V, 42A) N-CH, photo 2

IRFP150N MOSFET (100V, 42A) N-CH

Name: IRFP150N MOSFET (100V, 42A) N-CH
Brand: Future Electronics Egypt

Part number IRFP150N

Brand · Future Electronics Egypt

3 offers in stock at 3 shopsEGP 35 – 50

EGP 35 at Future Electronics Egypt

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Each offer shows the shop's own title.

IRFP150N MOSFET (100V, 42A) N-CH
Future Electronics Egypt
checked 16 days ago
EGP 35
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IRFP150N Power N-Channel MOSFET
RAM Electronics
checked 12 days ago
EGP 40
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IRFP150N N-Channel Power MOSFET 42A-100V-0.036Ohm TO-247
Makers Electronics
checked 23 days ago
EGP 50
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Details

FromMakers ElectronicsFuture Electronics EgyptRAM Electronics

From Makers Electronics's description

IRFP150N N-Channel Power MOSFET 42A-100V-0.036Ohm TO-247 The IRFP150N is a fifth-generation N-channel HEXFET power MOSFET that represents a significant advancement in power transistor technology. It utilizes advanced processing techniques to achieve an extremely low on-resistance per given silicon area. This device is engineered to deliver the fast switching speed and ruggedness that the HEXFET family is known for, providing designers with a highly efficient and reliable component. The core design focuses on optimizing the balance between conduction losses and switching performance. A key attribute of this MOSFET is its very low static drain-to-source on-resistance, which is a direct result of its fifth-generation technology. This low resistance is critical for minimizing power loss and heat generation when the device is in its fully on state, leading to higher overall system efficiency. The transistor is also fully avalanche-rated, meaning it is tested and guaranteed to withstand a certain level of energy from voltage transients, thereby enhancing the robustness and reliability of the end application. Housed in the TO-247 package, the IRFP150N is intended for commercial and industrial applications where the power levels exceed the capabilities of smaller packages like the TO-220. This package features an isolated central mounting hole, which simplifies the attachment to a heat sink without requiring insulating hardware. The robust physical construction allows the device to handle high power dissipation, making it suitable for demanding environments. Features: Planar cell structure for wide SOA. Optimized for broadest availability from distribution partners. Product qualification according to JEDEC standard. Silicon optimized for applications switching below <100kHz. Industry standard through-hole power package. High current rating. Specifications: Specification Value Drain-Source Voltage (VDSS): 100 V Continuous Drain Current (ID) @ Tc=25°C: 42 A Max. On-Resistance (RDS(on)) @ VGS=10V: 0.036 Ω Gate Threshold Voltage (VGS(th)): 2.0 – 4.0 V Max. Power Dissipation (PD) @ Tc=25°C: 160 W Gate-Source Voltage (VGS): ±20 V Total Gate Charge (Qg): 110 nC (max) Operating Junction Temperature (TJ): -55 to +175 °C Package: TO-247 Pinout Diagram: Footprint Diagram: Applications: Switch-Mode Power Supplies (SMPS). Motor Control Drives. Power Inverters and Converters. High-Power Audio Amplifiers. Industrial Power Switching Equipment. Package Contents: 1x IRFP150N N-Channel Power MOSFET 42A-100V-0.036Ohm TO-247 Datasheet