IRFZ44N N-Channel Power MOSFET Transistor 49A-55V-17.5mΩ TO-220 (Original)

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IRFZ44N N-Channel Power MOSFET Transistor 49A-55V-17.5mΩ TO-220 (Original) The IRFZ44N is an N-channel power MOSFET in a TO-220AB package engineered for low on-resistance and high current handling in compact power designs. Built with International Rectifier’s advanced processing, it delivers exceptional conduction efficiency per silicon area and a rugged device structure suitable for many commercial and industrial power stages. The device is aimed at designers needing a robust, general-purpose N-channel switch that balances low conduction losses with predictable switching behavior. Rated for a 55 V drain-source voltage and designed to carry large continuous currents (typical 49 A at TC = 25°C), the IRFZ44N exhibits an ultra-low RDS(on) of 17.5 mΩ when driven at VGS = 10 V. The datasheet provides detailed dynamic data gate charge, capacitances, diode recovery, and switching times — so the part can be accurately modeled in gate-drive and transient scenarios. The device also shows defined avalanche and transient thermal limits for reliable operation under inductive switching. Housed in TO-220 for easy heatsinking, the IRFZ44N supports up to ≈94 W dissipation (TC = 25°C) with appropriate mounting and thermal management. Its fast switching, controlled diode recovery and high avalanche ratings make it suitable for demanding switching converters, motor controllers and power management circuits where durability and low loss are required. Features: N-channel power MOSFET in TO-220AB package. Drain-source voltage rating of 55 V. Ultra-low RDS(on) = 17.5 mΩ (VGS = 10 V). High continuous drain current capability (49 A @ TC = 25°C). Low thermal resistance for efficient heatsinking. Fast switching with characterized turn-on/turn-off times. Fully avalanche rated with specified single-pulse energy. Wide operating junction temperature range up to +175°C. Controlled body-diode recovery and specified reverse recovery charge. Specifications: Parameter: Value: V(BR)DSS (Drain-Source Breakdown): 55 V. RDS(on) (Static On-Resistance): 17.5 mΩ (VGS = 10 V, ID = 25 A). ID (Continuous Drain Current @ TC = 25°C): 49 A. ID (Continuous Drain Current @ TC = 100°C): 35 A. IDM (Pulsed Drain Current): 160 A. PD (Power Dissipation @ TC = 25°C): 94 W. VGS (Gate-to-Source Voltage): ±20 V. EAS (Single Pulse Avalanche Energy): 530 mJ (see datasheet conditions). IAR (Avalanche Current): 25 A. EAR (Repetitive Avalanche Energy): 9.4 mJ. TJ (Operating Junction Temperature): −55 to +175 °C. RθJC (Junction-to-Case Thermal Resistance): 1.5 °C/W. RθJA (Junction-to-Ambient Thermal Resistance): 62 °C/W. Qg (Total Gate Charge): 63 nC (ID = 25 A). Qgs (Gate-to-Source Charge): 14 nC. Qgd (Gate-to-Drain / Miller Charge): 23 nC. Ciss / Coss / Crss (Capacitances): 1470 pF / 360 pF / 88 pF. VSD (Body-Diode Forward Voltage): 1.3 V (IS = 25 A, TJ = 25°C). trr (Reverse Recovery Time): 63 ns (typ), 95 ns (max) (conditions in datasheet). IRFZ44N Pinout Configuration Pin Number Pin Name Description 1 Gate Controls the biasing of the MOSFET 2 Drain Current flows in through Drain 3 Source Current flows out through Source Applications: Switching power supplies and DC-DC converters. Motor drives and control circuits. General-purpose load switching. Battery management and power distribution. Power amplifiers and audio output stages. Automotive and industrial power systems. Package Contents: 1x IRFZ44N N-Channel Power MOSFET Transistor 49A-55V-17.5mΩ TO-220 (Original) Datasheet