IRF1407 N-Channel Power MOSFET Transistor TO-220 (130A-75V-7.8mΩ)

Part number IRF1407

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EGP 35 at Makers Electronics

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IRF1407 N-Channel Power MOSFET Transistor TO-220 (130A-75V-7.8mΩ)
Makers Electronics
checked 27 days ago
EGP 35
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IRF1407 N-Channel Power MOSFET Transistor (130A-75V-7.8mΩ) TO-220
Micro Ohm
Price may be out of date (74 days)
EGP 35
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IRF1407 N-Channel MOSFET, 130A, 75V, 3-Pin, TO-220
Ampere Electronics
checked 22 days ago
EGP 40
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FromMakers ElectronicsMicro OhmAmpere Electronics

From Makers Electronics's description

IRF1407 N-Channel Power MOSFET Transistor TO-220 (130A-75V-7.8mΩ) The IRF1407 N-Channel Power MOSFET in a TO-220 package is an advanced HEXFET power transistor designed for high-efficiency and high-current switching applications. It operates with a breakdown voltage of 75V, making it suitable for handling substantial power levels in various circuits. The MOSFET is particularly valuable in automotive and industrial applications where robust power handling is required, thanks to its ability to manage continuous drain currents of up to 130A. The ultra-low on-resistance of 7.8mΩ enhances its efficiency by minimizing energy loss during operation. This MOSFET utilizes advanced manufacturing processes that optimize its performance in high-speed switching, making it ideal for applications requiring fast and reliable power conversion. Its high thermal tolerance, with a junction temperature rating of up to 175°C, allows it to operate efficiently even in challenging thermal conditions. The TO-220 package facilitates proper heat dissipation, ensuring stable operation under continuous high current. The IRF1407 is designed for use in power management systems, including automotive electrical systems, power supply units, and other high-power applications. Its durability and efficiency make it a go-to solution for engineers seeking reliable and cost-effective power switching. Features: Low on-resistance (7.8mΩ) for improved efficiency. High continuous drain current capacity (130A). Fast switching capability for power conversion. Robust avalanche energy handling. High thermal stability with a 175°C junction temperature. Specifications: Specification Value Model: IRF1407 Voltage (Vds): 75V Continuous Drain Current (Id): 130A On-Resistance (Rds(on)): 7.8mΩ Gate Threshold Voltage (Vgs(th)): 2.0V to 4.0V Total Gate Charge (Qg): 160nC Power Dissipation (Pd): 330W Operating Junction Temperature: 175°C Package: TO-220 Applications: Automotive Electrical Systems. Power Supply Units. Motor Drives. DC-DC Converters. Power Inverters. Related Documents: IRF1407 MOSFET Datasheet

IRF1407 N-Channel Power MOSFET Transistor TO-220 (130A-75V-7.8mΩ)

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