IRF3710 57A, 100V, 0.0023 Ohm, N-Channel Power MOSFET

IRF3710 57A, 100V, 0.0023 Ohm, N-Channel Power MOSFET, photo 2

IRF3710 57A, 100V, 0.0023 Ohm, N-Channel Power MOSFET, photo 3

IRF3710 57A, 100V, 0.0023 Ohm, N-Channel Power MOSFET

Part number IRF3710

2 offers in stock at 2 shopsEGP 30 – 35

EGP 30 at Ampere Electronics

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IRF3710 57A, 100V, 0.0023 Ohm, N-Channel Power MOSFET
Ampere Electronics
checked 18 days ago
EGP 30
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IRF3710 N-Channel Power MOSFET Transistor 57A 100V 23mΩ TO-220
Makers Electronics
checked 27 days ago
EGP 35
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Details

FromMakers ElectronicsAmpere Electronics

From Makers Electronics's description

IRF3710 N-Channel Power MOSFET Transistor 57A 100V 23mΩ TO-220 The IRF3710 N-Channel Power MOSFET Transistor 57A 100V 23mΩ TO-220 is a high-performance device designed for efficient power switching and control. With a low on-resistance of just 23mΩ, it minimizes power loss and heat generation, making it ideal for high-current and high-speed applications. Its robust TO-220 package ensures excellent thermal performance and reliability, suitable for use in DC motor drivers, power converters, and switching power supplies. Features N-Channel enhancement mode power MOSFET. High drain current up to 57A continuous. Low on-resistance of 23mΩ for efficient switching. High drain-source voltage rating of 100V. Fast switching speed with low gate charge. Rugged and reliable TO-220 package for superior heat dissipation. High efficiency with minimal conduction losses. Suitable for logic-level and high-speed switching applications. Specifications Parameter Symbol Value Unit Description Drain-Source Voltage VDSS 100 V Maximum voltage that can be applied from drain to source Continuous Drain Current ID 57 A Maximum continuous current through the drain Pulsed Drain Current ID(pulse) 200 A Maximum pulsed drain current Gate-Source Voltage VGS ±20 V Maximum voltage between gate and source Drain-Source On-Resistance RDS(on) 0.024 Ω Resistance between drain and source when ON Gate Threshold Voltage VGS(th) 2.0 – 4.0 V Minimum gate voltage required to turn ON the MOSFET Total Gate Charge Qg 67 nC Charge required to switch the gate Power Dissipation PD 160 W Maximum power the device can dissipate Operating Junction Temperature TJ -55 to +175 °C Safe operating temperature range Package Type — TO-220AB — Standard power transistor package Mounting Type — Through Hole — Suitable for PCB or heatsink mounting Pinout Configuration Pin No. Pin Name Description 1 Gate (G) Controls the MOSFET’s switching by applying a voltage signal. 2 Drain (D) Connected to the load; current flows from drain to source when the MOSFET is ON. 3 Source (S) Connected to ground or the negative terminal of the circuit. Applications DC-DC converters and power supply circuits. Motor control and driver circuits. Inverter and UPS systems. Switching regulators and load switches. Audio amplifier output stages. Battery management and protection circuits. High-speed switching and PWM control applications. Automotive and industrial power control systems. Package Contents 1 x IRF3710 N-Channel Power MOSFET Transistor 57A 100V 23mΩ TO-220 Datasheet IRF3710