IRFP064N N-Channel power MOSFET Transistor 55V 110A TO-247AC

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IRFP064N N-Channel power MOSFET Transistor 55V 110A TO-247AC The IRFP064N is part of the HEXFET® family of power MOSFETs by International Rectifier, designed to handle high currents with low on-resistance. This power MOSFET operates at a maximum drain-to-source voltage of 55V and can support a continuous drain current of up to 110A, making it suitable for high-power applications that require efficiency and reliability. It is built using advanced processing technology to achieve ultra-low on-resistance, ensuring minimal power loss during operation. The device is ideal for use in applications like motor control, power supplies, and automotive electronics. Its robust design offers excellent switching performance, with a fast switching speed that helps improve system efficiency. It also has a high operating temperature tolerance, capable of functioning in environments up to 175°C. The IRFP064N’s low on-resistance and fast switching capability make it a go-to component for applications requiring high efficiency and thermal management. With the TO-247 package, it is suitable for industrial applications, offering a more reliable alternative to traditional TO-220 packages for higher power levels. Features: Advanced Process Technology for enhanced performance. Ultra-Low On-Resistance for improved efficiency. Fast Switching Speed to optimize system performance. Rugged Design for high reliability in demanding environments. Fully Avalanche Rated, ensuring safe operation in extreme conditions. High Operating Temperature Range for reliable use in various conditions. Low Gate Drive Requirements due to its low gate threshold voltage. High Continuous Drain Current capability for power-hungry applications. TO-247 Package ideal for high-power applications, providing enhanced thermal management. Specifications: Parameter Value Drain-Source Voltage (Vds): 55V Continuous Drain Current (Id): 110A Pulsed Drain Current (Idm): 390A Power Dissipation (Pd): 200W Gate-Source Voltage (Vgs): ±20V On-Resistance (Rds(on)): 0.008Ω Gate Threshold Voltage (Vgs(th)): 2V to 4V Single Pulse Avalanche Energy (Eas): 480mJ Operating Junction Temperature (Tj): -55°C to 175°C Capacitance (Ciss): 4000pF Gate Charge (Qg): 170nC Reverse Recovery Time (trr): 110ns Body Diode Forward Voltage (Vsd): 1.3V Pinout: Pin Number Pin Name Function 1 Gate (G) Control terminal. Voltage applied here switches the device ON/OFF. 2 Drain (D) High-current, high-voltage terminal. The metal tab is internally connected to this pin. 3 Source (S) Common/return terminal. connected to ground. Footprint: Applications: High-Current DC-DC Converters and Switch-Mode Power Supplies (SMPS). Motor Drives and Controllers (for BLDC, Stepper, AC Induction Motors). Uninterruptible Power Supplies (UPS) and Inverters. High-Power Audio Amplifiers (Class D). Welding Equipment. Automotive and Industrial Power Switching. Packages: 1x IRFP064N N-Channel power MOSFET Transistor 55V 110A TO-247AC. Documents: IRFP064N Datasheet.