MTP3N60 N-Channel MOSFET Transistor TO-220

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MTP3N60 N-Channel MOSFET Transistor TO-220 The MTP3N60 is a rugged N-channel enhancement-mode power MOSFET in a TO-220 style package designed for high-voltage switching and power conversion applications, offering a 600V drain-source rating, proven avalanche energy capability and conservative on-resistance for reliable operation in SMPS, motor drives and lighting systems. Features 600V drain-source (VDS) rating for high-voltage applications. Avalanche-rugged construction with 100% avalanche testing for enhanced reliability under inductive switching stress. Low static on-resistance (RDS(on)) typically below 2.5Ω, reducing conduction losses. Continuous drain current up to 3.9A at Tc=25°C with higher pulsed current capability. Fast switching characteristics with moderate total gate charge for efficient high-voltage switching. Available in standard TO-220 for flexible mounting and thermal options. Specifications Parameter Value Part Number MTP3N60 Drain-Source Voltage 600V Gate-Source Voltage ±20V Gate Threshold Voltage (VGS(th)) 2-4.5V (typ ~3V) On-Resistance RDS(on) <2.5Ω Continuous Drain Current (Tc=25°C) 3.9A Continuous Drain Current (Tc=100°C) 2.4A Pulsed Drain Current 14A Total Dissipation (Tc=25°C) 100W Derating Factor 0.8W/°C Avalanche Energy (Single Pulse) 300mJ Safe Operating Area Specified in datasheet SOA plots Thermal Resistance Junction-Case 1.25°C/W Operating Junction Temperature -65°C to +150°C Applications Switch-mode power supplies (SMPS) and high-voltage DC-DC converters. Chopper regulators, motor drives, and industrial lighting controls. High-voltage power switching and snubber/avalanche-tolerant stages. General purpose high-voltage switching in consumer and industrial electronics. Package Contents 1x MTP3N60 N-Channel MOSFET Transistor TO-220. Documents Datasheet MTP3N60