2SK799 N-Channel MOSFET Transistor 450V 12A TO-3P

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2SK799 N-Channel MOSFET Transistor 450V 12A TO-3P The 2SK799 is an N-channel MOS field effect power transistor manufactured by NEC, designed specifically for high-efficiency switching power supplies, DC-DC converters, actuator controls, and pulse circuit applications. This robust power MOSFET delivers reliable performance in demanding power electronics environments, featuring a high drain-source voltage rating of 450V and a continuous drain current capability of 12A. The 2SK799 is engineered with advanced MOS technology to ensure low on-state resistance and excellent thermal stability, making it an ideal choice for engineers and hobbyists working on power conversion and motor control projects. Its TO-3P through-hole package provides straightforward mounting and effective heat dissipation for medium to high-power applications. Features: Suitable for switching power supplies, actuator controls, and pulse circuits. Low drain-source on-state resistance for minimal conduction losses. No secondary breakdown mechanism ensures robust operation. High voltage capability with 450V drain-source breakdown voltage. Fast switching characteristics with low delay and rise times. High forward transfer admittance for efficient gate drive control. Wide operating temperature range from -55°C to +150°C. Reliable TO-3P package for effective thermal management. Specifications: Parameter Value Transistor Type N-Channel MOSFET Drain-Source Voltage (VDSS) 450V Gate-Source Voltage (VGSS) ±20V Continuous Drain Current (ID(DC)) ±12A Pulsed Drain Current (ID(pulse)) ±40A Total Power Dissipation (PT) 120W Drain-Source On-State Resistance (RDS(on)) 0.40Ω (Typ.) / 0.50Ω (Max.) Gate-Source Cutoff Voltage (VGS(off)) 1.5V (Min.) / 3.5V (Max.) Forward Transfer Admittance (|Yfs|) 5.0S (Min.) Drain Leakage Current (IDSS) 100μA (Max.) Gate-Source Leakage Current (IGSS) ±100nA Input Capacitance (Ciss) 2000pF (Typ.) Output Capacitance (Coss) 500pF (Typ.) Reverse Transfer Capacitance (Crss) 140pF (Typ.) Turn-On Delay Time (td(on)) 20ns (Typ.) Rise Time (tr) 35ns (Typ.) Turn-Off Delay Time (td(off)) 100ns (Typ.) Fall Time (tf) 35ns (Typ.) Storage Temperature Range -55°C to +150°C Channel Temperature 150°C (Max.) Package Type TO-3P Mounting Style Through-Hole Pin Configuration: Pin Number Pin Name Function/Description 1 Gate (G) Gate control terminal for MOSFET switching. 2 Drain (D) Drain terminal with integrated heatsink fin. 3 Source (S) Source terminal, common reference for current flow. Applications: Switching power supplies. SMPS repair applications. DC-DC converters. AC power control systems. Motor driver circuits. Industrial automation electronics. High-voltage switching systems. Power inverter circuits. Electronic repair projects. Educational electronics applications. package Include: 1x 2SK799 N-Channel MOSFET Power Transistor 450V 12A TO-3P Datasheet