KGT15N60FDA IGBT Transistor TO-220F

From the shop's description

KGT15N60FDA IGBT Transistor TO-220F The KGT15N60FDA IGBT Transistor TO-220F is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching in various applications. It features a collector-emitter breakdown voltage of 600V, a continuous collector current of 15A, and a power dissipation of 41.6W, making it ideal for industrial and automotive systems. Housed in a TO-220F package, it offers excellent thermal performance and ease of mounting on printed circuit boards. Utilizing Non-Punch Through Trench technology, the KGT15N60FDA provides low switching losses, high energy efficiency, and robust avalanche and short-circuit ruggedness, ensuring reliable operation in demanding environments. Features: High Breakdown Voltage 600V collector-emitter voltage rating for high-voltage applications. High Collector Current 15A continuous current handling for robust performance. Low Saturation Voltage 1.7V at 15A (typical) for efficient power management. Specifications: Category IGBT Transistors Collector-Emitter Breakdown Voltage 600V Collector Current 15A @ 25°C Power Dissipation (Pd) 41.6W Collector-Emitter Saturation Voltage 1.7V @ 15A, TC=25°C Gate-Emitter Voltage ±20V Gate-Emitter Threshold Voltage 7V @ 1mA Rise Time 20ns Output Capacitance 90pF Total Gate Charge (Qg) 70nC Maximum Junction Temperature (Tj) 150°C Operating Temperature Range -55°C to +85°C Package TO-220F Pin Configuration: Pin Name Description 1 Gate (G) Gate Control Terminal 2 Collector (C) Collector Terminal 3 Emitter (E) Emitter Terminal Applications: Inverters & UPS Systems. Motor Drives. Data sheet: KGT15N60FDA