STP75NF75 N-Channel MOSFET Transistor 75V 9.5mΩ 80A TO-220

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STP75NF75 N-Channel MOSFET Transistor 75V 9.5mΩ 80A TO-220 The STP75NF75 is an N-channel 75V, 80A Power MOSFET from STMicroelectronics . It is built using the unique STripFET™ II process, which is specifically designed to minimize input capacitance and gate charge . This design makes it an excellent choice as the primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters, particularly for Telecom and Computer applications . It is also well-suited for any application that requires low gate drive power . Features Technology: STripFET™ II Power MOSFET Low On-Resistance Low Gate Charge High dv/dt Robustness: 100% avalanche tested Specifications Parameter Symbol Value Conditions / Notes General Characteristics Drain-Source Voltage V DS 75 V Continuous Drain Current I D 80 A at T C =25°C Static Drain-Source On-Resistance (Max) R DS(on) 0.0095 Ω at V GS =10V, I D =40A Absolute Maximum Ratings (at T C =25°C) Drain-Source Voltage (V GS =0) V DS 75 V Gate-Source Voltage V GS ±20 V Continuous Drain Current I D 80 A at T C =25°C Continuous Drain Current I D 70 A at T C =100°C Pulsed Drain Current I DM 320 A Pulse width limited by SOA Total Power Dissipation P TOT 300 W at T C =25°C Operating Junction Temperature T J -55 to 175 °C Single Pulse Avalanche Energy E AS 700 mJ Starting T J =25°C, I D =40A, V DD =37.5V Thermal Data Thermal Resistance Junction-Case (Max) R thJC 0.5 °C/W Applies to TO-220 package Thermal Resistance Junction-Ambient (Max) R thJA 62.5 °C/W Applies to TO-220 package Electrical Characteristics (at T C =25°C unless noted) Gate Threshold Voltage V GS(th) 2V (Min), 3V (Typ), 4V (Max) V DS =V GS , I D =250μA Total Gate Charge Q g 117 nC (Typ), 160 nC (Max) V DD =60V, I D =80A, V GS =10V Input Capacitance C iss 3700 pF (Typ) V DS =25V, f = 1 MHz, V GS =0 Output Capacitance C oss 730 pF (Typ) Reverse Transfer Capacitance C rss 240 pF (Typ) Switching Times (Typical values) Turn-on Delay Time t d(on) 25 ns V DD =37.5V, I D =45A, R G =4.7Ω, V GS =10V Rise Time t r 100 ns Turn-off Delay Time t d(off) 66 ns Fall Time t f 30 ns Applications General high-frequency switching applications Primary switch in high-efficiency DC-DC converters Telecom and computer power supplies Any application requiring low gate drive power DataSheet STP75NF75